2N5551 NPN BJT Transistor

The 2N5551 NPN Transistor BJT TO-92 is a top-tier, dependable, and multifaceted electronic component, engineered for an extensive array of electronic applications. This transistor is an optimal selection for individuals seeking superior performance and longevity.

Key Attributes

• High voltage capabilities: This feature makes it suitable for high voltage applications.
• Low noise: Guarantees seamless and effective operation.
• High current gain: Offers outstanding signal amplification.
• Compact TO-92 package: Simplifies installation and conserves circuit board space.

Technical Details

The technical specifications of the 2N5551 NPN Transistor BJT TO-92 are as follows:

• Type: NPN
• Collector-Emitter Voltage (Vceo): 160V
• Collector-Base Voltage (Vcbo): 180V
• Emitter-Base Voltage (Vebo): 6V
• Collector Current (Ic): 600mA
• Power Dissipation (Pd): 625mW
• DC Current Gain (hfe): Ranges from 80 to 300
• Package Type: TO-92

Potential Applications

The 2N5551 NPN Transistor BJT TO-92 is versatile and can be utilized in numerous applications, such as:

• Amplification circuits
• Switching circuits
• Signal processing
• Power regulation
• General purpose applications within the electronics domain

For more detailed information, please refer to the datasheet.