Toshiba 2SC2782 Transistor 36V 20A 220W 175Mhz

The Toshiba 2SC2782 is a top-tier NPN Bipolar Junction Transistor (BJT) specifically engineered for high-power RF applications. This brand-new, original Toshiba product is predominantly utilized in RF amplification circuits, a common component in radio communication systems.

Technical Specifications:

• Transistor Type: NPN BJT
• Maximum Collector-Emitter Voltage (Vceo): 36V
• Maximum Collector Current (Ic): 20A
• Maximum Power Dissipation (Pd): 220W
• Frequency Range: 30 MHz - 175 MHz
• Gain (hFE): 10 - 50
• Output Power (Pout): 100W (typical)
• Operating Temperature Range: -65°C to +200°C
• Package Type: TO-220 or similar (subject to manufacturer)
   

Key Features:

• High Output Power: Delivers a typical output power of 100W
• Wide Frequency Range: Accommodates RF signals ranging from 30 MHz to 175 MHz
• High Power Dissipation: Facilitates up to 200W, ensuring high performance with adequate cooling
• Durability: Engineered to endure challenging operating conditions

Applications:

• Radio Communication Systems: Ideal for use in RF amplification circuits
• Industrial RF Systems: Suitable for RF signal transmission and reception circuits
• Radio Transmitters: Perfect for medium-frequency radio communication applications

The 2SC2782 is a perfect transistor choice for RF applications demanding high power and reliability. With appropriate thermal management, it promises efficient and durable performance.
 

Safety Precautions:

The Toshiba 2SC2782 contains Beryllium Oxide (Beryllia) ceramics, which can be harmful to humans if its dust or vapor is inhaled. Please observe the following precautions:

• Hazard Warning: Dust or vapor may pose a risk to human health
• Handling Restrictions: Avoid breaking, cutting, crushing, or chemically dissolving the product
• Waste Management: Dispose of the product in compliance with legal regulations
• Mixing Warning: Do not mix with industrial or domestic waste
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If you need more detailed information, feel free to ask!