NXP PHX9NQ20T N-Channel MOSFET in TO-220 Package

The NXP PHX9NQ20T is a high-performing N-channel MOSFET transistor, designed for optimal efficiency in power electronics applications. It is particularly suited for use in control and switching circuits.

Key Technical Specifications:

• Drain-source voltage (Vds): 200V
• Continuous drain current (Id): 5.2A
• Peak drain current (Id,pulse): 21A
• Gate threshold voltage (Vgs(th)): 2V - 4V
• Rds(on): 0.5Ω (maximum)
• Power dissipation (Pd): 25W
• Maximum operating temperature: 150°C
• Package type: TO-220

The NXP PHX9NQ20T MOSFET is distinguished by its minimal conduction loss and superior durability. It is a popular choice for power supplies, motor drivers, industrial control systems, and a variety of general switching applications.
The TO-220 package is a significant feature of this MOSFET, providing effective heat dissipation and facilitating easy mounting. This makes it a perfect fit for systems that prioritize energy efficiency.