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BD139 NPN BJT Transistor

BD139 NPN BJT Transistor
BD139 NPN BJT Transistor
0.51RON
Ex Tax: 0.51RON
  • Stock: In Stock
  • Model: A0341.BD137
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BD139 Transistor BJT NPN TO-126

The BD139 Transistor BJT NPN TO-126 is a superior, dependable, and high-performing transistor, engineered for an extensive array of applications. This multifaceted component is indispensable for a variety of electronic and electrical circuits.

Key Features

  • High current gain and low saturation voltage
  • Outstanding hFE linearity
  • High power dissipation capability
  • Complementary PNP/NPN types
  • Designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits

Technical Specifications

  • Collector-Emitter Voltage (Vceo): 80V
  • Collector-Base Voltage (Vcbo): 80V
  • Emitter-Base Voltage (Vebo): 5V
  • Collector Current (Ic): 1.5A
  • Power Dissipation (Pd): 12.5W
  • Operating and Storage Junction Temperature Range: -55 to +150°C
  • Package Type: TO-126

Possible Applications

  • Audio amplifiers
  • Driver stages in hi-fi amplifiers and television circuits
  • Signal processing
  • Power management
  • Switching applications

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