MGW12N120 IGBT – High Voltage Insulated Gate Bipolar Transistor
6.99RON
Ex Tax: 6.99RON
- Stock: In Stock
- Model: A1269.MGW12N120
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MGW12N120 IGBT – High Voltage Insulated Gate Bipolar Transistor for Power Switching
The MGW12N120 is a robust Insulated Gate Bipolar Transistor (IGBT) designed for high voltage and high current power switching applications. It combines the fast switching capability of a MOSFET with the high current and low saturation voltage of a bipolar transistor.
⚙️ Key Features
- ? Collector-emitter voltage (VCES): 1200V
- ⚡ Collector current (IC): 12A
- ? TO-247 package for excellent thermal management
- ⏱️ Fast switching speed suitable for inverter and motor control
- ?️ High efficiency with low conduction losses
? Typical Applications
- ⚙️ Industrial motor drives
- ? Power inverters and converters
- ? Renewable energy systems
- ?️ High power switching circuits
The MGW12N120 IGBT is ideal for demanding power electronics requiring high voltage and current handling with efficient switching performance.
